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Transistor:
BLA9H0912LS-700
Power LDMOS transistor
700 W LDMOS power transistor for avionics applications in the frequency range from 960 MHz to 1215 MHz.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 960 | 1215 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 700 | W | |||
| Test signal: Pulsed RF | ||||||
| VDS | drain-source voltage | 1030 MHz [0] | 50 | V | ||
| Gp | power gain | 1030 MHz [0] | 20 | dB | ||
| ηD | drain efficiency | 1030 MHz [0] | 62 | % | ||
| PL | output power | 1030 MHz [0] | 700 | W | ||
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking | Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLA9H0912LS-700 | SOT502B (SOT502B) |
sot502b_po | Bulk Pack | Active | Standard Marking | BLA9H0912LS-700U (9349 602 03112) |
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |  |
 |
| 2 | G | gate | ||
| 3 | S | source |
| Settings | BLA9H0912LS-700 remove | CLF3H0060-30 remove | BLP15H9S10 remove | BLF978P remove | BLF0910H9LS600 remove | BLP15M9S30 remove |
|---|---|---|---|---|---|---|
| Name | BLA9H0912LS-700 remove | CLF3H0060-30 remove | BLP15H9S10 remove | BLF978P remove | BLF0910H9LS600 remove | BLP15M9S30 remove |
| Image | |  |  |  |  |  |
| SKU | BLF978P | |||||
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| Price | ||||||
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| Add to cart | ||||||
| Description | RF Power Lifetime CalculatorTransistor: BLA9H0912LS-700 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15H9S10 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLF978P HF / VHF power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLF0910H9LS600 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15M9S30 Power LDMOS transistor | |
| Content | Power LDMOS transistor
700 W LDMOS power transistor for avionics applications in the frequency range from 960 MHz to 1215 MHz.
Features and benefits
Applications
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The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
Features and benefits
| Power LDMOS transistor
A 10 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.
Features and benefits
Applications
| HF / VHF power LDMOS transistor
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
Features and benefits
Applications
| Power LDMOS transistor
A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.
The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.
Features and benefits
Applications
| Power LDMOS transistor
A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band.
Features and benefits
Applications
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| Weight | ||||||
| Dimensions | N/A | N/A | N/A | N/A | N/A | N/A |
| Additional information |
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