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Transistor:
BLA9G1011L-300
Power LDMOS transistor
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1030 | 1090 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 317 | W | |||
| Test signal: Pulsed RF | ||||||
| VDS | drain-source voltage | 1030-1090 MHz [0] | 32 | V | ||
| Gp | power gain | 1030-1090 MHz [0] | 21.5 | dB | ||
| ηD | drain efficiency | 1030-1090 MHz [0] | 64.8 | % | ||
| tr | rise time | 1030-1090 MHz [0] | 14 | ns | ||
| tf | fall time | 1030-1090 MHz [0] | 5 | ns | ||
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking | Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLA9G1011L-300 | SOT502A (SOT502A) |
sot502a_po | Bulk Pack | Active | Standard Marking | BLA9G1011L-300U (9349 600 47112) |
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |  |
 |
| 2 | G | gate | ||
| 3 | S | source |
| Settings | BLA9G1011L-300 remove | CLF3H0035-100 remove | BLF974P remove | ART2K0FE remove | ART150PE remove | CLF3H0060-30 remove |
|---|---|---|---|---|---|---|
| Name | BLA9G1011L-300 remove | CLF3H0035-100 remove | BLF974P remove | ART2K0FE remove | ART150PE remove | CLF3H0060-30 remove |
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| Description | RF Power Lifetime CalculatorTransistor: BLA9G1011L-300 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLF974P HF / VHF power LDMOS transistor | RF Power Lifetime CalculatorTransistor: ART2K0FE Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: ART150PE Power LDMOS transistor | ||
| Content | Power LDMOS transistor
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
Features and benefits
Applications
| Broadband RF power GaN HEMT
The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
Features and benefits
| HF / VHF power LDMOS transistor
A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
Features and benefits
Applications
| Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
Features and benefits
Applications
| Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz
Features and benefits
Applications
| Broadband RF power GaN HEMT
The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
Features and benefits
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| Dimensions | N/A | N/A | N/A | N/A | N/A | N/A |
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