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Transistor:
BLF0910H9LS600
Power LDMOS transistor
A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.
The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 830 | 900 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 600 | W | |||
| Test signal: CW | ||||||
| VDS | drain-source voltage | 915 MHz [0] | 50 | V | ||
| Gp | power gain | 915 MHz [0] | 19.8 | dB | ||
| ηD | drain efficiency | 915 MHz [0] | 68.5 | % | ||
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking | Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF0910H9LS600 | SOT502B (SOT502B) |
sot502b_po | Reel 13" Q1/T1 | Active | Standard Marking | BLF0910H9LS600J (9349 601 21118) |
|
| Bulk Pack | Active | Standard Marking | BLF0910H9LS600U (9349 601 21112) |
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |  |
 |
| 2 | G | gate | ||
| 3 | S | source |
| Settings | BLF0910H9LS600 remove | ART150PE remove | ART2K0FE remove | BLP05H9S500P remove | BLP15H9S10 remove | CLF3H0035-100 remove |
|---|---|---|---|---|---|---|
| Name | BLF0910H9LS600 remove | ART150PE remove | ART2K0FE remove | BLP05H9S500P remove | BLP15H9S10 remove | CLF3H0035-100 remove |
| Image | |  |  |  |  |  |
| SKU | BLP05H9S500P | |||||
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| Description | RF Power Lifetime CalculatorTransistor: BLF0910H9LS600 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: ART150PE Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: ART2K0FE Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP05H9S500P Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15H9S10 Power LDMOS transistor | |
| Content | Power LDMOS transistor
A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.
The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.
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| Broadband RF power GaN HEMT
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Features and benefits
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| Dimensions | N/A | N/A | N/A | N/A | N/A | N/A |
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