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A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 10 | 700 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 500 | W | |||
| Test signal: CW pulsed | ||||||
| VDS | drain-source voltage | PL = 500 W [0] | 50 | V | ||
| Gp | power gain | PL = 500 W [0] | 24.5 | 25.7 | dB | |
| ηD | drain efficiency | PL = 500 W [0] | 74 | 76 | % | |
| RLin | input return loss | PL = 500 W [0] | -19 | -15 | dB | |
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking | Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF974P | SOT539A (SOT539A) |
sot539a_po | Bulk Pack | Active | Standard Marking | BLF974PU (9349 602 94112) |
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |  |
 |
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
| Settings | BLF974P remove | CLF3H0035-100 remove | ART700FH remove | BLF978P remove | BLP15H9S10 remove | ART150PE remove |
|---|---|---|---|---|---|---|
| Name | BLF974P remove | CLF3H0035-100 remove | ART700FH remove | BLF978P remove | BLP15H9S10 remove | ART150PE remove |
| Image |  |  |  |  |  |  |
| SKU | BLF978P | |||||
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| Price | ||||||
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| Availability | Còn hàng | Còn hàng | Còn hàng | Còn hàng | Còn hàng | Còn hàng |
| Add to cart | ||||||
| Description | RF Power Lifetime CalculatorTransistor: BLF974P HF / VHF power LDMOS transistor | RF Power Lifetime CalculatorTransistor: ART700FH Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLF978P HF / VHF power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15H9S10 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: ART150PE Power LDMOS transistor | |
| Content | HF / VHF power LDMOS transistor
A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
Features and benefits
Applications
| Broadband RF power GaN HEMT
The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
Features and benefits
| Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
Features and benefits
Applications
| HF / VHF power LDMOS transistor
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
Features and benefits
Applications
| Power LDMOS transistor
A 10 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.
Features and benefits
Applications
| Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz
Features and benefits
Applications
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| Weight | ||||||
| Dimensions | N/A | N/A | N/A | N/A | N/A | N/A |
| Additional information |
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