BLF978P

SKU: BLF978P
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Transistor:
BLF978P

HF / VHF power LDMOS transistor

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Mô tả

HF / VHF power LDMOS transistor

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (10 MHz to 700 MHz)
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications
Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 700 MHz
PL(1dB) nominal output power at 1 dB gain compression 1200 W
Test signal: CW pulsed
VDS drain-source voltage PL = 1200 W [0] 50 V
Gp power gain PL = 1200 W [0] 23 24.5 dB
ηD drain efficiency PL = 1200 W [0] 78 80.6 %
RLin input return loss PL = 1200 W [0] -20 -12 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF978P SOT539A
(SOT539A)
sot539a_po Bulk Pack Active Standard Marking BLF978PU
(9349 602 93112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

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Description

RF Power Lifetime Calculator

Transistor: BLF978P HF / VHF power LDMOS transistor

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Content

HF / VHF power LDMOS transistor

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (10 MHz to 700 MHz)
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Power LDMOS transistor

700 W LDMOS power transistor for avionics applications in the frequency range from 960 MHz to 1215 MHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for avionics band operation
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Avionics transmitter applications in the frequency range from 960 MHz to 1215 MHz

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz

Features and benefits

  • High breakdown voltage enables class E operation up to VDS = 53 V
  • Qualified up to a maximum of VDS = 65 V
  • Characterized from 30 V to 65 V to support a wide range of applications
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • Particle accelerators
    • Defrosting
  • Broadcast
    • FM radio
    • VHF TV
  • Radar
    • Non cellular communications
    • UHF radar

Broadband RF power GaN HEMT

The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.

Features and benefits

  • 30 W general purpose broadband RF power GaN HEMT
  • High efficiency
  • Low thermal resistance
  • Excellent ruggedness
  • Designed for broadband operation in the frequency range from DC to 6.0 GHz
  • For RoHS compliance see the product details on the Ampleon website
  • Large signal models in ADS and MWO are available on the Ampleon website

Power LDMOS transistor

A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band.

Features and benefits

  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications
  • RF power amplifiers for CW applications

Power LDMOS transistor

A 10 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.

Features and benefits

  • Designed for broadband operation
  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • Excellent stability
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Broadcast transmitter applications
  • Industrial, scientific and medical applications
  • Applicable at frequencies from HF to 2 GHz
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