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Transistor:
BLP15H9S30G
Power LDMOS transistor
A 30 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1 | 2000 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 30 | W | |||
| Test signal: Pulsed RF | ||||||
| VDS | drain-source voltage | 50 | V | |||
| Gp | power gain | PL = 30 W [0] | 20 | 21 | dB | |
| ηD | drain efficiency | PL = 30 W [0] | 62 | 65 | % | |
| RLin | input return loss | PL = 30 W [0] | -5 | -3 | dB | |
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking | Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLP15H9S30G | TO270 (TO-270-2G-1) |
to270-2g-1 | TR13; 500-fold; 24 mm; dry pack | Active | Standard Marking | BLP15H9S30GZ (9349 603 11515) |
|
| TR7; 100-fold; 24 mm; dry pack | Active | Standard Marking | BLP15H9S30GXY (9349 603 11538) |
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |  |
 |
| 2 | G | gate | ||
| 3 | S | source |
| Settings | BLP15H9S30G remove | BLP15H9S10G remove | BLA9H0912LS-700 remove | CLF3H0035-100 remove | BLP15H9S10 remove | BLP15H9S100 remove |
|---|---|---|---|---|---|---|
| Name | BLP15H9S30G remove | BLP15H9S10G remove | BLA9H0912LS-700 remove | CLF3H0035-100 remove | BLP15H9S10 remove | BLP15H9S100 remove |
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| Description | RF Power Lifetime CalculatorTransistor: BLP15H9S30G Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15H9S10G Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLA9H0912LS-700 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15H9S10 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15H9S100 Power LDMOS transistor | |
| Content | Power LDMOS transistor
A 30 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.
Features and benefits
Applications
| Power LDMOS transistor
A 10 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.
Features and benefits
Applications
| Power LDMOS transistor
700 W LDMOS power transistor for avionics applications in the frequency range from 960 MHz to 1215 MHz.
Features and benefits
Applications
| Broadband RF power GaN HEMT
The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
Features and benefits
| Power LDMOS transistor
A 10 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.
Features and benefits
Applications
| Power LDMOS transistor
A 100 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.
Features and benefits
Applications
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| Weight | ||||||
| Dimensions | N/A | N/A | N/A | N/A | N/A | N/A |
| Additional information |
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