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Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1 | 650 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 150 | W | |||
| Test signal: CW pulsed | ||||||
| VDS | drain-source voltage | PL = 150 W [0] | 65 | V | ||
| Gp | power gain | PL = 150 W [0] | 29 | 31.2 | dB | |
| RLin | input return loss | PL = 150 W [0] | -24 | -29 | dB | |
| ηD | drain efficiency | PL = 150 W [0] | 70 | 75.3 | % | |
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking | Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| ART150PE | TO270 (TO-270-2F-1) |
to270_2f-1 | TR7; 100-fold; 24 mm; dry pack | Active | Standard Marking | ART150PEXY (9349 604 91538) |
|
| TR13; 500-fold; 24 mm; dry pack | Active | Standard Marking | ART150PEZ (9349 604 91515) |
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |  |
 |
| 2 | G | gate | ||
| 3 | S | source |
| Settings | ART150PE remove | BLP15H9S30G remove | CLF3H0060-30 remove | BLF0910H9LS600 remove | BLF974P remove | CLF3H0035-100 remove |
|---|---|---|---|---|---|---|
| Name | ART150PE remove | BLP15H9S30G remove | CLF3H0060-30 remove | BLF0910H9LS600 remove | BLF974P remove | CLF3H0035-100 remove |
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| Description | RF Power Lifetime CalculatorTransistor: ART150PE Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15H9S30G Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLF0910H9LS600 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLF974P HF / VHF power LDMOS transistor | ||
| Content | Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz
Features and benefits
Applications
| Power LDMOS transistor
A 30 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.
Features and benefits
Applications
| Broadband RF power GaN HEMT
The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
Features and benefits
| Power LDMOS transistor
A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.
The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.
Features and benefits
Applications
| HF / VHF power LDMOS transistor
A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
Features and benefits
Applications
| Broadband RF power GaN HEMT
The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
Features and benefits
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| Dimensions | N/A | N/A | N/A | N/A | N/A | N/A |
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