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Transistor:
BLA9H0912LS-700
Power LDMOS transistor
700 W LDMOS power transistor for avionics applications in the frequency range from 960 MHz to 1215 MHz.
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 960 | 1215 | MHz | ||
PL(1dB) | nominal output power at 1 dB gain compression | 700 | W | |||
Test signal: Pulsed RF | ||||||
VDS | drain-source voltage | 1030 MHz [0] | 50 | V | ||
Gp | power gain | 1030 MHz [0] | 20 | dB | ||
ηD | drain efficiency | 1030 MHz [0] | 62 | % | ||
PL | output power | 1030 MHz [0] | 700 | W |
Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking | Orderable part number, (Ordering code (12NC)) |
---|---|---|---|---|---|---|---|
BLA9H0912LS-700 | SOT502B (SOT502B) |
sot502b_po | Bulk Pack | Active | Standard Marking | BLA9H0912LS-700U (9349 602 03112) |
Pin | Symbol | Description | Simplified outline | Graphic symbol |
---|---|---|---|---|
1 | D | drain | ||
2 | G | gate | ||
3 | S | source |
Settings | BLA9H0912LS-700 remove | BLP05H9S500P remove | CLF3H0035-100 remove | ART150PE remove | ART700FH remove | BLP15H9S10 remove |
---|---|---|---|---|---|---|
Name | BLA9H0912LS-700 remove | BLP05H9S500P remove | CLF3H0035-100 remove | ART150PE remove | ART700FH remove | BLP15H9S10 remove |
Image | ||||||
SKU | BLP05H9S500P | |||||
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Description | RF Power Lifetime CalculatorTransistor: BLA9H0912LS-700 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP05H9S500P Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: ART150PE Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: ART700FH Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15H9S10 Power LDMOS transistor | |
Content | Power LDMOS transistor
700 W LDMOS power transistor for avionics applications in the frequency range from 960 MHz to 1215 MHz.
Features and benefits
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The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
Features and benefits
| Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz
Features and benefits
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| Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
Features and benefits
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| Power LDMOS transistor
A 10 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.
Features and benefits
Applications
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Weight | ||||||
Dimensions | N/A | N/A | N/A | N/A | N/A | N/A |
Additional information |
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