BLA9H0912LS-700

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Transistor:
BLA9H0912LS-700

Power LDMOS transistor

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Mô tả

Power LDMOS transistor

700 W LDMOS power transistor for avionics applications in the frequency range from 960 MHz to 1215 MHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for avionics band operation
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Avionics transmitter applications in the frequency range from 960 MHz to 1215 MHz

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 960 1215 MHz
PL(1dB) nominal output power at 1 dB gain compression 700 W
Test signal: Pulsed RF
VDS drain-source voltage 1030 MHz [0] 50 V
Gp power gain 1030 MHz [0] 20 dB
ηD drain efficiency 1030 MHz [0] 62 %
PL output power 1030 MHz [0] 700 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLA9H0912LS-700 SOT502B
(SOT502B)
sot502b_po Bulk Pack Active Standard Marking BLA9H0912LS-700U
(9349 602 03112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

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Description

RF Power Lifetime Calculator

Transistor: BLA9H0912LS-700 Power LDMOS transistor

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Content

Power LDMOS transistor

700 W LDMOS power transistor for avionics applications in the frequency range from 960 MHz to 1215 MHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for avionics band operation
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Avionics transmitter applications in the frequency range from 960 MHz to 1215 MHz

Broadband RF power GaN HEMT

The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.

Features and benefits

  • 100 W general purpose broadband RF power GaN HEMT
  • High efficiency
  • Low thermal resistance
  • Excellent ruggedness
  • Designed for broadband operation in the frequency range from DC to 3.5 GHz
  • For RoHS compliance see the product details on the Ampleon website

HF / VHF power LDMOS transistor

A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (10 MHz to 700 MHz)
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

Features and benefits

  • High breakdown voltage enables class E operation up to VDS = 53 V
  • Qualified up to a maximum of VDS = 65 V
  • Characterized from 30 V to 65 V to support a wide range of applications
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • CO2 lasers
    • Particle accelerators
  • Broadcast
    • FM radio
    • VHF TV
  • Communications
    • Non cellular communications
    • UHF radar

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz

Features and benefits

  • High breakdown voltage enables class E operation up to VDS = 53 V
  • Qualified up to a maximum of VDS = 65 V
  • Characterized from 30 V to 65 V to support a wide range of applications
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • Particle accelerators
    • Defrosting
  • Broadcast
    • FM radio
    • VHF TV
  • Radar
    • Non cellular communications
    • UHF radar

Power LDMOS transistor

A 10 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.

Features and benefits

  • Designed for broadband operation
  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • Excellent stability
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Broadcast transmitter applications
  • Industrial, scientific and medical applications
  • Applicable at frequencies from HF to 2 GHz
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