BLF0910H9LS600

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Transistor:
BLF0910H9LS600

Power LDMOS transistor

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Mô tả

Power LDMOS transistor

A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.

The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Integrated ESD protection
  •  Designed for broadband operation (900 MHz to 930 MHz)
  • Internally input matched
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial applications in the 915 MHz ISM band

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 830 900 MHz
PL(1dB) nominal output power at 1 dB gain compression 600 W
Test signal: CW
VDS drain-source voltage 915 MHz [0] 50 V
Gp power gain 915 MHz [0] 19.8 dB
ηD drain efficiency 915 MHz [0] 68.5 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF0910H9LS600 SOT502B
(SOT502B)
sot502b_po Reel 13" Q1/T1 Active Standard Marking BLF0910H9LS600J
(9349 601 21118)
Bulk Pack Active Standard Marking BLF0910H9LS600U
(9349 601 21112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

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SKUBLP05H9S500P
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Description

RF Power Lifetime Calculator

Transistor: BLF0910H9LS600 Power LDMOS transistor

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Content

Power LDMOS transistor

A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz. The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Integrated ESD protection
  •  Designed for broadband operation (900 MHz to 930 MHz)
  • Internally input matched
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial applications in the 915 MHz ISM band

Power LDMOS transistor

700 W LDMOS power transistor for avionics applications in the frequency range from 960 MHz to 1215 MHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for avionics band operation
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Avionics transmitter applications in the frequency range from 960 MHz to 1215 MHz

Power LDMOS transistor

500 W LDMOS power transistor for various applications such as ISM, RF plasma lighting and defrosting at frequencies from 423 MHz to 443 MHz.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Integrated ESD protection
  • Designed for ISM operation (423 MHz to 443 MHz)
  • Excellent thermal stability
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifiers for CW and pulsed CW applications in the 423 MHz to 443 MHz frequency range such as ISM, RF plasma lighting and defrosting

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz

Features and benefits

  • High breakdown voltage enables class E operation up to VDS = 53 V
  • Qualified up to a maximum of VDS = 65 V
  • Characterized from 30 V to 65 V to support a wide range of applications
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • Particle accelerators
    • Defrosting
  • Broadcast
    • FM radio
    • VHF TV
  • Radar
    • Non cellular communications
    • UHF radar

Power LDMOS transistor

A 100 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.

Features and benefits

  • Designed for broadband operation
  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • Excellent stability
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Broadcast transmitter applications
  • Industrial, scientific and medical applications
  • Applicable at frequencies from HF to 2 GHz

Broadband RF power GaN HEMT

The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.

Features and benefits

  • 100 W general purpose broadband RF power GaN HEMT
  • High efficiency
  • Low thermal resistance
  • Excellent ruggedness
  • Designed for broadband operation in the frequency range from DC to 3.5 GHz
  • For RoHS compliance see the product details on the Ampleon website
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