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Transistor:
BLP05H9S500P
Power LDMOS transistor
500 W LDMOS power transistor for various applications such as ISM, RF plasma lighting and defrosting at frequencies from 423 MHz to 443 MHz.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 423 | 443 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 500 | W | |||
| Test signal: CW | ||||||
| VDS | drain-source voltage | 433 MHz [0] | 50 | V | ||
| PL | output power | 433 MHz [0] | 500 | W | ||
| Gp | power gain | 433 MHz [0] | 25.3 | dB | ||
| ηD | drain efficiency | 433 MHz [0] | 75 | % | ||
| Test signal: CW pulsed | ||||||
| VDS | drain-source voltage | 433 MHz [0] [1] | 50 | V | ||
| PL | output power | 433 MHz [0] [1] | 500 | W | ||
| Gp | power gain | 433 MHz [0] [1] | 25.6 | dB | ||
| ηD | drain efficiency | 433 MHz [0] [1] | 75.8 | % | ||
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking | Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLP05H9S500P | OMP-780-4F-1 (OMP-780-4F-1) |
omp-780-4f-1_po | Reel 13" Q1/T1 in Drypack | Active | Standard Marking | BLP05H9S500PY (9349 602 23518) |
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | G2 | gate 2 |  |
 |
| 2 | G1 | gate 1 | ||
| 3 | D1 | drain1 | ||
| 4 | D2 | drain2 |
| Settings | BLP05H9S500P remove | CLF3H0060-30 remove | ART150PE remove | CLF3H0035-100 remove | ART700FH remove | BLA9G1011L-300 remove |
|---|---|---|---|---|---|---|
| Name | BLP05H9S500P remove | CLF3H0060-30 remove | ART150PE remove | CLF3H0035-100 remove | ART700FH remove | BLA9G1011L-300 remove |
| Image | |  |  |  |  |  |
| SKU | BLP05H9S500P | |||||
| Rating | ||||||
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| Description | RF Power Lifetime CalculatorTransistor: BLP05H9S500P Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: ART150PE Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: ART700FH Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLA9G1011L-300 Power LDMOS transistor | ||
| Content | Power LDMOS transistor
500 W LDMOS power transistor for various applications such as ISM, RF plasma lighting and defrosting at frequencies from 423 MHz to 443 MHz.
Features and benefits
Applications
| Broadband RF power GaN HEMT
The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
Features and benefits
| Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz
Features and benefits
Applications
| Broadband RF power GaN HEMT
The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
Features and benefits
| Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
Features and benefits
Applications
| Power LDMOS transistor
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
Features and benefits
Applications
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| Weight | ||||||
| Dimensions | N/A | N/A | N/A | N/A | N/A | N/A |
| Additional information |
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