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Transistor:
BLP15M9S30
Power LDMOS transistor
A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 10 | 2000 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 30 | W | |||
| Test signal: Pulsed RF, class-AB | ||||||
| VDS | drain-source voltage | f = 1400 MHz: PL = 30 W [0] | 32 | V | ||
| Gp | power gain | f = 1400 MHz: PL = 30 W [0] | 16.5 | 19.3 | dB | |
| ηD | drain efficiency | f = 1400 MHz: PL = 30 W [0] | 66 | 71 | % | |
| RLin | input return loss | f = 1400 MHz: PL = 30 W [0] | -18 | dB | ||
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking | Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLP15M9S30 | TO270 (TO-270-2F-1) |
to270_2f-1 | TR13; 500-fold; 24 mm; dry pack | Active | Standard Marking | BLP15M9S30Z (9349 602 46515) |
|
| TR7; 100-fold; 24 mm; dry pack | Active | Standard Marking | BLP15M9S30XY (9349 602 46538) |
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |  |
 |
| 2 | G | gate | ||
| 3 | S | source |
| Settings | BLP15M9S30 remove | BLF0910H9LS600 remove | CLF3H0035-100 remove | BLF974P remove | BLA9H0912LS-700 remove | BLP15H9S100 remove |
|---|---|---|---|---|---|---|
| Name | BLP15M9S30 remove | BLF0910H9LS600 remove | CLF3H0035-100 remove | BLF974P remove | BLA9H0912LS-700 remove | BLP15H9S100 remove |
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| Description | RF Power Lifetime CalculatorTransistor: BLP15M9S30 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLF0910H9LS600 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLF974P HF / VHF power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLA9H0912LS-700 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15H9S100 Power LDMOS transistor | |
| Content | Power LDMOS transistor
A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band.
Features and benefits
Applications
| Power LDMOS transistor
A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.
The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.
Features and benefits
Applications
| Broadband RF power GaN HEMT
The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
Features and benefits
| HF / VHF power LDMOS transistor
A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
Features and benefits
Applications
| Power LDMOS transistor
700 W LDMOS power transistor for avionics applications in the frequency range from 960 MHz to 1215 MHz.
Features and benefits
Applications
| Power LDMOS transistor
A 100 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.
Features and benefits
Applications
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| Weight | ||||||
| Dimensions | N/A | N/A | N/A | N/A | N/A | N/A |
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