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Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 1 | 450 | MHz | ||
PL(1dB) | nominal output power at 1 dB gain compression | 700 | W | |||
Test signal: Pulsed RF | ||||||
VDS | drain-source voltage | PL = 800 W [0] | 55 | V | ||
Gp | power gain | PL = 800 W [0] | 26.8 | 28.6 | dB | |
RLin | input return loss | PL = 800 W [0] | -32.7 | dB | ||
ηD | drain efficiency | PL = 800 W [0] | 73 | 77.6 | % |
Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking | Orderable part number, (Ordering code (12NC)) |
---|---|---|---|---|---|---|---|
ART700FH | SOT1214A (SOT1214A) |
sot1214a_po | Tray; 20-fold; non-dry pack | Active | Standard Marking | ART700FHU (9349 604 89112) |
Pin | Symbol | Description | Simplified outline | Graphic symbol |
---|---|---|---|---|
1 | D1 | drain1 | ||
2 | D2 | drain2 | ||
3 | G1 | gate1 | ||
4 | G2 | gate2 | ||
5 | S | source |
Settings | ART700FH remove | CLF3H0060-30 remove | BLA9G1011L-300 remove | BLP05H9S500P remove | ART2K0FE remove | BLP15H9S10G remove |
---|---|---|---|---|---|---|
Name | ART700FH remove | CLF3H0060-30 remove | BLA9G1011L-300 remove | BLP05H9S500P remove | ART2K0FE remove | BLP15H9S10G remove |
Image | ||||||
SKU | BLP05H9S500P | |||||
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Description | RF Power Lifetime CalculatorTransistor: ART700FH Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLA9G1011L-300 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP05H9S500P Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: ART2K0FE Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15H9S10G Power LDMOS transistor | |
Content | Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
Features and benefits
Applications
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Features and benefits
Applications
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A 10 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.
Features and benefits
Applications
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Weight | ||||||
Dimensions | N/A | N/A | N/A | N/A | N/A | N/A |
Additional information |
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