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Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1 | 450 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 700 | W | |||
| Test signal: Pulsed RF | ||||||
| VDS | drain-source voltage | PL = 800 W [0] | 55 | V | ||
| Gp | power gain | PL = 800 W [0] | 26.8 | 28.6 | dB | |
| RLin | input return loss | PL = 800 W [0] | -32.7 | dB | ||
| ηD | drain efficiency | PL = 800 W [0] | 73 | 77.6 | % | |
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking | Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| ART700FH | SOT1214A (SOT1214A) |
sot1214a_po | Tray; 20-fold; non-dry pack | Active | Standard Marking | ART700FHU (9349 604 89112) |
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |  |
 |
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
| Settings | ART700FH remove | BLA9H0912LS-700 remove | BLF978P remove | BLP15H9S30G remove | CLF3H0060-30 remove | BLP05H9S500P remove |
|---|---|---|---|---|---|---|
| Name | ART700FH remove | BLA9H0912LS-700 remove | BLF978P remove | BLP15H9S30G remove | CLF3H0060-30 remove | BLP05H9S500P remove |
| Image | |  |  |  |  |  |
| SKU | BLF978P | BLP05H9S500P | ||||
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| Add to cart | ||||||
| Description | RF Power Lifetime CalculatorTransistor: ART700FH Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLA9H0912LS-700 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLF978P HF / VHF power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15H9S30G Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP05H9S500P Power LDMOS transistor | |
| Content | Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
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Features and benefits
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| Weight | ||||||
| Dimensions | N/A | N/A | N/A | N/A | N/A | N/A |
| Additional information |
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