BLF0910H9LS600

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Transistor:
BLF0910H9LS600

Power LDMOS transistor

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Mô tả

Power LDMOS transistor

A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.

The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Integrated ESD protection
  •  Designed for broadband operation (900 MHz to 930 MHz)
  • Internally input matched
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial applications in the 915 MHz ISM band

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 830 900 MHz
PL(1dB) nominal output power at 1 dB gain compression 600 W
Test signal: CW
VDS drain-source voltage 915 MHz [0] 50 V
Gp power gain 915 MHz [0] 19.8 dB
ηD drain efficiency 915 MHz [0] 68.5 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF0910H9LS600 SOT502B
(SOT502B)
sot502b_po Reel 13" Q1/T1 Active Standard Marking BLF0910H9LS600J
(9349 601 21118)
Bulk Pack Active Standard Marking BLF0910H9LS600U
(9349 601 21112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

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Description

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Content

Power LDMOS transistor

A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz. The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Integrated ESD protection
  •  Designed for broadband operation (900 MHz to 930 MHz)
  • Internally input matched
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial applications in the 915 MHz ISM band

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz

Features and benefits

  • High breakdown voltage enables class E operation up to VDS = 53 V
  • Qualified up to a maximum of VDS = 65 V
  • Characterized from 30 V to 65 V to support a wide range of applications
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • Particle accelerators
    • Defrosting
  • Broadcast
    • FM radio
    • VHF TV
  • Radar
    • Non cellular communications
    • UHF radar

Power LDMOS transistor

A 10 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.

Features and benefits

  • Designed for broadband operation
  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • Excellent stability
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Broadcast transmitter applications
  • Industrial, scientific and medical applications
  • Applicable at frequencies from HF to 2 GHz

Power LDMOS transistor

A 100 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.

Features and benefits

  • Designed for broadband operation
  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • Excellent stability
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Broadcast transmitter applications
  • Industrial, scientific and medical applications
  • Applicable at frequencies from HF to 2 GHz

Power LDMOS transistor

A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band.

Features and benefits

  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications
  • RF power amplifiers for CW applications

HF / VHF power LDMOS transistor

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (10 MHz to 700 MHz)
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications
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