BLF0910H9LS600

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Transistor:
BLF0910H9LS600

Power LDMOS transistor

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Mô tả

Power LDMOS transistor

A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.

The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Integrated ESD protection
  •  Designed for broadband operation (900 MHz to 930 MHz)
  • Internally input matched
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial applications in the 915 MHz ISM band

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 830 900 MHz
PL(1dB) nominal output power at 1 dB gain compression 600 W
Test signal: CW
VDS drain-source voltage 915 MHz [0] 50 V
Gp power gain 915 MHz [0] 19.8 dB
ηD drain efficiency 915 MHz [0] 68.5 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF0910H9LS600 SOT502B
(SOT502B)
sot502b_po Reel 13" Q1/T1 Active Standard Marking BLF0910H9LS600J
(9349 601 21118)
Bulk Pack Active Standard Marking BLF0910H9LS600U
(9349 601 21112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

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SettingsBLF0910H9LS600 removeART2K0FE removeBLP15H9S100 removeBLA9G1011L-300 removeCLF3H0060-30 removeBLP15H9S10G remove
NameBLF0910H9LS600 removeART2K0FE removeBLP15H9S100 removeBLA9G1011L-300 removeCLF3H0060-30 removeBLP15H9S10G remove
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Description

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Content

Power LDMOS transistor

A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz. The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Integrated ESD protection
  •  Designed for broadband operation (900 MHz to 930 MHz)
  • Internally input matched
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial applications in the 915 MHz ISM band

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

Features and benefits

  • High breakdown voltage enables class E operation up to VDS = 53 V
  • Qualified up to a maximum of VDS = 65 V
  • Characterized from 30 V to 65 V to support a wide range of applications
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • CO2 lasers
    • Particle accelerators
  • Broadcast
    • FM radio
    • VHF TV
  • Communications
    • Non cellular communications
    • UHF radar

Power LDMOS transistor

A 100 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.

Features and benefits

  • Designed for broadband operation
  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • Excellent stability
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Broadcast transmitter applications
  • Industrial, scientific and medical applications
  • Applicable at frequencies from HF to 2 GHz

Power LDMOS transistor

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz

Features and benefits

  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • Enhanced ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (1030 MHz to 1090 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substance (RoHS)

Applications

  • Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range

Broadband RF power GaN HEMT

The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.

Features and benefits

  • 30 W general purpose broadband RF power GaN HEMT
  • High efficiency
  • Low thermal resistance
  • Excellent ruggedness
  • Designed for broadband operation in the frequency range from DC to 6.0 GHz
  • For RoHS compliance see the product details on the Ampleon website
  • Large signal models in ADS and MWO are available on the Ampleon website

Power LDMOS transistor

A 10 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.

Features and benefits

  • Designed for broadband operation
  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • Excellent stability
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Broadcast transmitter applications
  • Industrial, scientific and medical applications
  • Applicable at frequencies from HF to 2 GHz
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