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The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 0 | 6000 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 30 | W | |||
| Test signal: Pulsed CW | ||||||
| VDS | drain-source voltage | [0] | 50 | V | ||
| Gp | power gain | PL = 30 W [0] | 15.5 | 17 | dB | |
| RLin | input return loss | PL = 30 W [0] | -15 | dB | ||
| ηD | drain efficiency | PL = 30 W [0] | 57 | 61.5 | % | |
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking | Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| CLF3H0060-30 | CDFM2 (SOT1227A) |
sot1227a_po | Tray; 20-fold; non-dry pack | Active | Standard Marking | CLF3H0060-30U (9349 603 36112) |
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |  |
 |
| 2 | G | gate | ||
| 3 | S | source |
| Settings | CLF3H0060-30 remove | BLA9G1011L-300 remove | BLA9H0912LS-700 remove | BLP15H9S30G remove | BLP15M9S30 remove | BLP15H9S10G remove |
|---|---|---|---|---|---|---|
| Name | CLF3H0060-30 remove | BLA9G1011L-300 remove | BLA9H0912LS-700 remove | BLP15H9S30G remove | BLP15M9S30 remove | BLP15H9S10G remove |
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| Description | RF Power Lifetime CalculatorTransistor: BLA9G1011L-300 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLA9H0912LS-700 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15H9S30G Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15M9S30 Power LDMOS transistor | RF Power Lifetime CalculatorTransistor: BLP15H9S10G Power LDMOS transistor | |
| Content | Broadband RF power GaN HEMT
The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
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| Dimensions | N/A | N/A | N/A | N/A | N/A | N/A |
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