ART150PE

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Transistor:
ART150PE

Power LDMOS transistor

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Mô tả

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz

Features and benefits

  • High breakdown voltage enables class E operation up to VDS = 53 V
  • Qualified up to a maximum of VDS = 65 V
  • Characterized from 30 V to 65 V to support a wide range of applications
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • Particle accelerators
    • Defrosting
  • Broadcast
    • FM radio
    • VHF TV
  • Radar
    • Non cellular communications
    • UHF radar

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 650 MHz
PL(1dB) nominal output power at 1 dB gain compression 150 W
Test signal: CW pulsed
VDS drain-source voltage PL = 150 W [0] 65 V
Gp power gain PL = 150 W [0] 29 31.2 dB
RLin input return loss PL = 150 W [0] -24 -29 dB
ηD drain efficiency PL = 150 W [0] 70 75.3 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
ART150PE TO270
(TO-270-2F-1)
to270_2f-1 TR7; 100-fold; 24 mm; dry pack Active Standard Marking ART150PEXY
(9349 604 91538)
TR13; 500-fold; 24 mm; dry pack Active Standard Marking ART150PEZ
(9349 604 91515)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

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Description

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Content

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz

Features and benefits

  • High breakdown voltage enables class E operation up to VDS = 53 V
  • Qualified up to a maximum of VDS = 65 V
  • Characterized from 30 V to 65 V to support a wide range of applications
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • Particle accelerators
    • Defrosting
  • Broadcast
    • FM radio
    • VHF TV
  • Radar
    • Non cellular communications
    • UHF radar

HF / VHF power LDMOS transistor

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (10 MHz to 700 MHz)
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Power LDMOS transistor

A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz. The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Integrated ESD protection
  •  Designed for broadband operation (900 MHz to 930 MHz)
  • Internally input matched
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial applications in the 915 MHz ISM band

Power LDMOS transistor

500 W LDMOS power transistor for various applications such as ISM, RF plasma lighting and defrosting at frequencies from 423 MHz to 443 MHz.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Integrated ESD protection
  • Designed for ISM operation (423 MHz to 443 MHz)
  • Excellent thermal stability
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifiers for CW and pulsed CW applications in the 423 MHz to 443 MHz frequency range such as ISM, RF plasma lighting and defrosting

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

Features and benefits

  • High breakdown voltage enables class E operation up to VDS = 53 V
  • Qualified up to a maximum of VDS = 65 V
  • Characterized from 30 V to 65 V to support a wide range of applications
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • CO2 lasers
    • Particle accelerators
  • Broadcast
    • FM radio
    • VHF TV
  • Communications
    • Non cellular communications
    • UHF radar

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and non cellular communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.

Features and benefits

  • High breakdown voltage enables class E operation at VDS = 48 V
  • Suitable for VDS = 50 and 55 V
  • Qualified up to a maximum of VDS = 55 V
  • Characterized from 30 V to 55 V to support a wide range of applications
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • CO2 lasers
    • Particle accelerators
  • Broadcast
    • FM radio
    • VHF TV
  • Communications
    • Non cellular communications
    • UHF radar
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