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Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1 | 400 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 2000 | W | |||
| Test signal: Pulsed RF | ||||||
| VDS | drain-source voltage | PL = 2000 W [0] | 65 | V | ||
| Gp | power gain | PL = 2000 W [0] | 27 | 28.4 | dB | |
| RLin | input return loss | PL = 2000 W [0] | -13.9 | dB | ||
| ηD | drain efficiency | PL = 2000 W [0] | 69 | 72.1 | % | |
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking | Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| ART2K0FE | SOT539AN (SOT539AN) |
sot539an_po | Tray, 20-fold; non-dry pack | Active | Standard Marking | ART2K0FEU (9349 602 80112) |
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |  |
 |
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
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